
IDT70X525XML
Low Power 4K x 8 TriPort Static RAM
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
70X525X
Ind'l Only
Preliminary
Industrial Temperature Range
Symbol
Parameter
Min.
Max.
Unit
READ CYCLE
t RC
t AA
t ACE
t AOE
t OH
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Hold from Address Change
55
____
____
____
5
____
55
55
30
____
ns
ns
ns
ns
ns
t LZ
Output Low-Z Time
(1,2)
5
____
ns
t HZ
Output High-Z Time
(1,2)
____
25
ns
t PU
Chip Enable to Power Up Time
(2)
0
____
ns
t PD
Chip Disable to Power Down Time
(2)
____
55
ns
NOTES:
5681 tb10
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
Timing Waveform of Read Cycle No. 2, Any Port (1, 2)
t ACE
CE x or BE x (3)
OE
t AOE
DATA OUT
t PU
t LZ
(4)
VALID DATA
t HZ
t PD
(5)
I CC
CURRENT
I SB
50%
50%
,
5681 drw 08
NOTES:
1. R/ W = V IH for Read Cycles.
2. Addresses valid prior to or coincident with CE (or BE x) transition LOW.
3. CE for Port 2 or Port 3, BE x for Port 1.
4. Timing depends on which signal is asserted last, CE (or BE x) or OE .
5. Timing depends on which signal is deasserted first, CE (or BE x) or OE .
8
6.42